Wideband Low-Noise Amplifiers Aiming at Achieving Transistor Fmin

Date
2020-12
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE : New York, New York
Abstract
Many RF receivers operate over wide bandwidths and required wideband low-noise amplifiers (LNAs). While there are many wideband LNA topologies available, only some of them are able to achieve noise factors that are close to the lowest noise factors offered by a given semiconductor technology. This article complements an earlier RFIC Virtual Journal article from April 2014 by focusing on LNA topologies that are theoretically able to exhibit both wideband input match and wideband noise matching. Three broad groups of input matching strategies are identified as promising for the implementation of very-low-noise wideband amplifiers. With the focus on wideband LNA noise, this article does not consider LNA linearity, gain, and power consumption.
Description
Keywords
Index Terms--- Wideband LNA Design Considerations, Noise Measure; LNA Design Techniques; LNA Design Papers; Simultaneous Noise and Power Matching, Reactive Feedback, Transformer Feedback, Intrinsic Feedback, Noise Factor Sensitivity, Negative Capacitor; Nullor; Generalized Immitance Converter; Negative Impedance Converter
Citation
Belostotski, L. (2020). Wideband Low-Noise Amplifiers Aiming at Achieving Transistor Fmin. "IEEE RFIC Virtual Journal". pp. 1-9. DOI: 10.1109/RFIC.2020.0000021