Topological Photonic Insulators (TPIs) have emerged as a unique platform for enabling robust edge state transport in photonic systems, immune to defects and scattering. This study investigates TPIs based on coupled microring resonators fabricated on Silicon-on-Insulator (SOI) substrates. These systems operate as Floquet insulators due to time-dependent coupling, modeled as periodically driven quantum systems. The topologically protected edge states demonstrate robustness against disorder and imperfections, confirming the effectiveness of this approach. Additionally, localized defects along edge states generate anomalous Floquet defect mode resonance (FDMR) a resonance mode along the edge state, enabling cavityless tunable resonance in silicon-based photonic systems. Enhanced photon pair generation through non-degenerate Spontaneous Four-Wave Mixing particularly in FDMR is achieved. Transitioning to Spontaneous Parametric Down Conversion is facilitated by Aluminum Nitride (AlN), a material with second-order nonlinearity. Electro-optic property of AlN allows stable, fast-modulating local defects, offering significant improvements over thermo-optic modulation utilized in silicon devices and advancing integrated photonics applications.