Gas-phase Chemistry of Methyl-Substituted Silanes in a Hot-wire Chemical Vapour Deposition Process

atmire.migration.oldid1242
dc.contributor.advisorShi, Yujun
dc.contributor.authorToukabri, Rim
dc.date.accessioned2013-08-27T20:50:21Z
dc.date.available2014-08-28T07:00:16Z
dc.date.issued2013-08-27
dc.date.submitted2013en
dc.description.abstractThe primary decomposition and secondary gas-phase reactions of methyl-substituted silane molecules, including monomethylsilane (MMS), dimethylsilane (DMS), trimethylsilane (TriMS) and tetramethylsilane (TMS), in hot-wire chemical vapour deposition (HWCVD) processes have been studied using laser ionization methods in combination with time of flight mass spectrometry (TOF-MS). For all four molecules, methyl radical formation and hydrogen molecule formation have been found to be the common decomposition steps on both tungsten (W) and tantalum (Ta) filaments. The apparent activation energy ranges from 51.1 to 84.7 kJ ∙ mol-1 for the methyl radical formation and 55.4 to 70.7 kJ ∙ mol-1 for the formation of H2. Both activation energy values increase with the number of methyl substitutions in the precursor molecules on W and Ta filaments. The formation of these two species is initiated by Si-H bond cleavage. This cleavage is then followed by Si-CH3 bond breakage producing methyl radical, whereas two H adsorbates on the surface of the filament recombine releasing H2 into the gas phase, following Langmuir-Hinshelwood mechanism. The secondary gas-phase reactions of MMS and DMS in a HWCVD reactor have also been investigated. For DMS as a precursor gas, a competition between silene/ silylene chemistry occurring at low temperature and radical chain mechanism present at high temperature is observed. For MMS, its gas-phase chemistry involves exclusively silylene species, characterized by its insertion and dimerization reactions. It is concluded that both free-radical and silenes/silylenes intermediates play important roles in the gas-phase chemistry of methyl-substituted silanes. A comparison of the secondary gas-phase reactions of TMS, TriMS, DMS, and MMS revealed a switch in dominance from free-radical chemistry to silene/silylene chemistry as the number of methyl substitution on the precursor molecule is decreased. A study of the effect of deposition parameters, including precursor pressure and filament material, has shown that these parameters influenced significantly the gas-phase chemistry of TriMS and DMS. This is due to the competition between free-radical reactions and silylene/silene reactions. However, these parameters do not affect the gas-phase chemistry of MMS since it involves only one type of intermediate.en_US
dc.description.embargoterms12 monthsen_US
dc.identifier.citationToukabri, R. (2013). Gas-phase Chemistry of Methyl-Substituted Silanes in a Hot-wire Chemical Vapour Deposition Process (Doctoral thesis, University of Calgary, Calgary, Canada). Retrieved from https://prism.ucalgary.ca. doi:10.11575/PRISM/26257en_US
dc.identifier.doihttp://dx.doi.org/10.11575/PRISM/26257
dc.identifier.urihttp://hdl.handle.net/11023/891
dc.language.isoeng
dc.publisher.facultyGraduate Studies
dc.publisher.institutionUniversity of Calgaryen
dc.publisher.placeCalgaryen
dc.rightsUniversity of Calgary graduate students retain copyright ownership and moral rights for their thesis. You may use this material in any way that is permitted by the Copyright Act or through licensing that has been assigned to the document. For uses that are not allowable under copyright legislation or licensing, you are required to seek permission.
dc.subjectPhysical
dc.subject.classificationmethyl-substituted silanesen_US
dc.subject.classificationHot-Wire Chemical vapour depositionen_US
dc.subject.classificationlaser ionizationen_US
dc.titleGas-phase Chemistry of Methyl-Substituted Silanes in a Hot-wire Chemical Vapour Deposition Process
dc.typedoctoral thesis
thesis.degree.disciplineChemistry
thesis.degree.grantorUniversity of Calgary
thesis.degree.nameDoctor of Philosophy (PhD)
ucalgary.item.requestcopytrue
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